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Resonant Acceptor Level in Zero‐Gap Semiconductors. Single and Multiple Scattering Effects
Author(s) -
Bastard G.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220800227
Subject(s) - acceptor , scattering , semiconductor , zero (linguistics) , impurity , condensed matter physics , materials science , conductivity , band gap , atomic physics , physics , quantum mechanics , optoelectronics , linguistics , philosophy
A theory of a resonant acceptor level in zero gap semiconductors is developed taking into account the multiple scattering processes. It is shown that the results accounting only for contribution proportional to the impurity concentration describe properly the evolution of the activation energy in Hg 1—x Cd x Te alloys. However, it is necessary to include the multiple scattering effects to obtain reliable expressions of the density of states and the conductivity. Analytical expressions are obtained and discussed. Comparison with experimental data is made when possible.