The Dielectric Relaxation of Impurity—Vacancy Complexes in KI Doped with Cl +  Anions | Zendy

Zílio S. C. | Zendy; De Souza M. | Zendy

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The Dielectric Relaxation of Impurity—Vacancy Complexes in KI Doped with Cl + Anions

Author(s) -

Zílio S. C.,

De Souza M.

Publication year - 1977

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2220800221

Subject(s) - divalent , ion , vacancy defect , impurity , relaxation (psychology) , dielectric , doping , trapping , chemistry , kinetics , inorganic chemistry , analytical chemistry (journal) , crystallography , materials science , organic chemistry , physics , psychology , social psychology , ecology , optoelectronics , quantum mechanics , biology

Using the ITC technique the dielectric relaxation of KI doped with divalent ions and small amounts of Cl − or Br − anions is studied. New low temperature ITC peaks are found at temperatures as low as 120 K. Also a strong effect is found in the aggregation kinetics of the divalent ions. A model for the trapping of the divalent ions by the Cl − or Br − anions is proposed.

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