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Simultaneous Kinetics of Drops and Excitons in Silicon during the Drop Formation
Author(s) -
Collet J.,
Barrau J.,
Brousseau M.,
Maaref H.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220800207
Subject(s) - drop (telecommunication) , kinetics , exciton , homogeneous , silicon , excitation , luminescence , materials science , drop out , thermodynamics , chemistry , physics , condensed matter physics , classical mechanics , optoelectronics , quantum mechanics , computer science , telecommunications , economics , demographic economics
Using an homogeneous excitation, the simultaneous kinetics of drop and exciton luminescence are measured during the initial regime of drop formation in silicon. Theoretical simulations of the exciton density developped, do not fit well the experimental lineshapes. From an analysis of the experimental curves, it is suggested that a coalescing effect of drops must be taken into account to improve the fit of the experimental kinetics by the theoretical model.