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Inhomogeneous Strain Field Scattering Deformation Potential. II. Free‐Carrier Mobility Associated with Dislocation Strain Fields in Semiconductors
Author(s) -
Farvacque J. L.,
Lenglart P.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220800204
Subject(s) - dislocation , condensed matter physics , scattering , deformation (meteorology) , materials science , strain (injury) , tellurium , enhanced data rates for gsm evolution , semiconductor , field (mathematics) , optics , physics , composite material , metallurgy , optoelectronics , mathematics , medicine , telecommunications , pure mathematics , computer science
Using the expression of the scattering deformation potential, established in a preceding paper, the reversal mobility of free carriers associated to edge dislocations is calculated and the results are compared to those obtained by using the classical deformation potential of Bardeen and Shockley. Collation with experimental data obtained on edge‐dislocated tellurium, shows quantitative agreement with the present results.