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Inhomogeneous strain field scattering deformation potential. I. Theory
Author(s) -
Farvacque J. L.,
Lenglart P.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220800142
Subject(s) - hamiltonian (control theory) , scattering , condensed matter physics , perturbation (astronomy) , semiconductor , physics , conductivity , classical mechanics , quantum mechanics , mathematics , mathematical optimization
The influence of a small inhomogeneous deformation strain field on the expression of the crystal Hamiltonian is presented in terms of perturbation of the undeformed crystal Hamiltonian. In the different perturbation terms, leading to the band‐structure shift in semiconductors and which explains the conductivity change in piezoresistance experiments, one identifies an aperiodical term with the scattering potential needed for free carrier mobility calculations.