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Light scattering and spin diffusion in doped semiconductors
Author(s) -
Vasconcellos A. R.,
Luzzi R.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220800121
Subject(s) - condensed matter physics , quasiparticle , semiconductor , raman scattering , spin diffusion , doping , magnetic semiconductor , scattering , materials science , electron , spin (aerodynamics) , inelastic scattering , raman spectroscopy , physics , ferromagnetism , optics , superconductivity , optoelectronics , quantum mechanics , thermodynamics
Inelastic scattering of light by single‐particle spin‐flip electron excitations and paramagnetic spin‐waves in semiconductor magneto‐plasmas is considered. The generalized Landau quasiparticle picture is used to calculate the Raman cross section. Particular attention is given to n‐doped GaAs for carrier concentrations in the metallic region ( r n = 1.6). Scattering of the carriers with lattice vibrations is considered to discuss the spin‐diffusion coefficient, in uniform quasi‐equilibrium conditions, as a function of the magnetic field and the electron effective temperature. Spin‐flip magneto‐Raman investigations in doped semiconductors can produce valuable information on the “hot metallic electron liquid” and its interactions.