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Multiphoton absorption by charge carriers in semiconductors in a magnetic field
Author(s) -
Fomin V. M.,
Pokatilov E. P.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220790224
Subject(s) - absorption (acoustics) , condensed matter physics , magnetic field , charge carrier , attenuation coefficient , semiconductor , phonon , materials science , atomic physics , chemistry , physics , optics , optoelectronics , quantum mechanics
Abstract A theory of absorption of strong electromagnetic radiation by charge carriers in semiconductors in a static uniform magnetic field is developed. By using the density matrix method in path‐integral representation the multiphonon absorption coefficient in semiconductors is calculated at arbitrary temperatures for different scattering mechanisms such as ionized impurities, polar and nonpolar interactions with optical phonons, and deformation and piezoelectric interactions with acoustical phonons. The coefficients of magnetic non‐linearity in weak magnetic fields are studied. The structure of the absorption spectrum in an arbitrary magnetic field is investigated, the existence of multiphoton absorption resonances revealed and the dependence of their parameters on the order of resonance and on the conditions of absorption is obtained. The asymptotic properties of the absorption coefficient in a strong magnetic field are analyzed. The anisotropy of absorption due to a magnetic field is discussed in each case.