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Influence of electron‐ion spin coupling on the electronic properties of a ferromagnetic semiconductor
Author(s) -
Nolting W.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220790222
Subject(s) - magnon , condensed matter physics , electron , ferromagnetism , semiconductor , magnetic semiconductor , ion , physics , lattice (music) , absorption edge , spin (aerodynamics) , band gap , quantum mechanics , acoustics , thermodynamics
An attempt is made to obtain theoretical predictions concerning ferromagnetic semiconductors, especially the Eu‐chalcogenides, by approximate determination of relevant spectral densities. Of primary interest is the influence of the localized Heisenberg spin system (4f‐levels) on the conduction band. The electron‐magnon interaction is regarded in the sense of emission and absorption of magnons by conduction electrons and the resulting distortion of the electronic dispersion is discussed for an f.c.c. lattice. The magnetic red shift of the optical absorption edge, as it is experimentally observed for the ferromagnetic Eu‐chalcogenides, can be reproduced nearly quantitatively by discussing the dependence on the band width. Some well‐known, exactly calculable limiting cases, e.g. the Richmond‐criterion, are shown to be fulfilled by the approximation.