Premium
Photo and dark conductivity of doped amorphous silicon
Author(s) -
Rehm W.,
Fischer R.,
Stuke J.,
Wagner H.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220790218
Subject(s) - doping , conductivity , photoconductivity , materials science , amorphous silicon , activation energy , amorphous solid , silicon , atmospheric temperature range , fermi level , condensed matter physics , analytical chemistry (journal) , electron , chemistry , optoelectronics , crystalline silicon , physics , thermodynamics , crystallography , chromatography , quantum mechanics
The photo and dark conductivity of boron‐ and phosphorus‐doped amorphous silicon is measured in the temperature range from 100 to 400 K, for various doping levels. Increasing doping generally decreases the activation energy of dark conductivity, down to 0.2 eV, and also decreases the σ 0 ‐value (extrapolation of dark conductivity for T → ∞). This lowering of σ 0 is explained by a temperature shift of the Fermi level plus a change in the conduction mechanism. The activation energy of photoconductivity is also lowered, at least by phosphorus doping, which is understood by an influence of doping on the tailing of the bands.