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On the theory of exciton absorption in amorphous semiconductors
Author(s) -
Majerníková E.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220790136
Subject(s) - exciton , gaussian , absorption (acoustics) , amorphous solid , absorption edge , amorphous semiconductors , condensed matter physics , materials science , physics , statistical physics , molecular physics , chemistry , quantum mechanics , optics , crystallography , band gap
An investigation is made of the exciton effects, including the effect of the deformation of the internal state due to “collisions” with the random barriers in the case when ϱ ∼ L ‐ D e , on the absorption coefficients of amorphous solids characterized by a Gaussian random potential. The factor exp [η 2 (1 α nl ) β 2 ] in the density matrix due to the random potential, appearing in this case, is shown to be responsible for an approximately Gaussian shape of the absorption edge.