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XPS and APS studies of V 3 Si
Author(s) -
Nilsson P. O.,
Curelaru I.,
Jarlborg T.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220790128
Subject(s) - x ray photoelectron spectroscopy , valence band , materials science , valence (chemistry) , single crystal , crystallography , analytical chemistry (journal) , atomic physics , chemistry , band gap , physics , nuclear magnetic resonance , optoelectronics , organic chemistry , chromatography
The occupied and unoccupied parts of the valence band of V 3 Si single crystal are studied by means of XPS and APS techniques, respectively. Agreement with calculated band structure data is obtained.

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