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Submillimeter conductivity of thermal and warm electrons in GaAs and InP
Author(s) -
Philipp A.,
Kuchajr F.,
Seeger K.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220790111
Subject(s) - electron , thermal conduction , relaxation (psychology) , materials science , radiation , transmittance , electric field , condensed matter physics , range (aeronautics) , thermal conductivity , conductivity , conduction band , atomic physics , physics , optoelectronics , optics , psychology , social psychology , quantum mechanics , composite material
Experimental and theoretical results of the transmittance of submillimeter radiation (890 GHz) by n‐GaAs and n‐InP show that the relaxation time obtained from the do mobility can be used for describing high‐frequency effects in this range of the spectrum too. The investigation of heating the conduction electrons by the electric field of radiation (“warm electrons”) yields the energy relaxation time τ ε in GaAs and InP. The experimental values of τ ε are larger than those calculated by a simple electron temperature model. This discrepancy can be removed by assuming a “two‐electron‐temperature” model.