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Resonance Raman scattering in a strong electric field
Author(s) -
Bechstedt F.,
Enderlein R.,
Peuker K.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220780232
Subject(s) - raman scattering , x ray raman scattering , electric field , scattering , resonance (particle physics) , field (mathematics) , phonon scattering , phonon , raman spectroscopy , cross section (physics) , condensed matter physics , atomic physics , physics , optics , quantum mechanics , mathematics , pure mathematics
A theory is given for the influence of an external electric field on the allowed one‐phonon resonance Raman scattering. It is shown that the phonon peaks of the scattering spectrum remain unbroadened in the presence of the field. The scattering cross section decreases due to the field induced broadening of the stationary electron energies. The relative field induced changes are remarkably large — of the order of magnitude one — if lifetime broadening effects can be neglected. Results for all types of critical points of the electronic transition are presented. It is shown that the field induced change of the scattering cross section decreases strongly if lifetime broadening effects are important. The results provide the theoretical basis for the application of the electromodulation technique to resonance Raman scattering.