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Shubnikov‐de Haas investigations on n‐type Bi 2 (Se x Te 1− x ) 3
Author(s) -
Köhler H.,
Haigis W.,
von Middendorff A.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220780223
Subject(s) - magnetoresistance , chemistry , conduction band , condensed matter physics , selenium , electron , physics , magnetic field , organic chemistry , quantum mechanics
Shubnikov‐de Haas magnetoresistance oscillations are observed in the mixed crystal system Bi 2 (Se x Te 1− x ) 3 for 0 < x ≦ 0.1 and 0.8 ≦ x < 1 at temperatures between 1.7 and 4 2 K in magnetic fields up to 10.5 T flux density. The electron concentrations ranged from 5 × 10 17 to 6.5 × 10 19 cm −3 . In both the separate ranges (Te‐rich and Se‐rich composition) the electronic mass parameters are essentially unchanged compared to pure Bi 2 Te 3 and Bi 2 Se 3 , respectively. For the Te‐rich side the energy gap between the lowest conduction band and the postulated second type of conduction band valleys decreases with increasing selenium content. The evaluated g ‐tensor ellipsoids correspond to the results for n‐Bi 2 Te 3 in the region 0 < x ≦ 0.1.