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Relationships between the nonradiative multiphonon carrier‐capture properties of deep charged and neutral centres in semiconductors
Author(s) -
Pässler R.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220780222
Subject(s) - semiconductor , isotropy , atomic physics , physics , statistical physics , computational physics , quantum mechanics
On the basis of a certain set of empirical trap‐structure parameters, an analytical description is given of nonradiative multiphonon capture and ejection processes (Shockley‐Read processes) occurring at deep traps in direct and indirect semiconductors. The mechanism‐specific connections between the capture properties of charged and neutral centres are represented in terms of suitably defined temperature‐averaged Sommerfeld factors. These factors are, within the approximation of an isotropic effective free‐carrier mass, calculated explicitly both for attractive and repulsive centres.