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Electron transport phenomena in narrow‐ and zero‐gap semiconductors containing magnetic impurities
Author(s) -
Kossut J.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220780212
Subject(s) - scattering , condensed matter physics , ionized impurity scattering , impurity , seebeck coefficient , semiconductor , electron , manganese , carrier scattering , materials science , electron mobility , thermoelectric effect , doping , chemistry , physics , optics , optoelectronics , organic chemistry , thermodynamics , quantum mechanics , metallurgy
Various transport phenomena are studied which are due to scattering of electrons in narrow‐ and zero‐gap semiconductors by magnetic impurities, namely manganese impurities. The formulae for the relaxation time corresponding to this scattering mechanism are derived and the mobility and thermoelectric power are discussed. Numerical estimations for manganese‐doped mercury telluride are presented. They show that the contribution of magnetic impurity scattering to the electron mobility, although smaller than that of ionized centre scattering, cannot be neglected at low temperatures. The thermoelectric power seems to be strongly influenced by the presence of the considered scattering mechanism. The dependence of transport coefficients on the range of the scattering potential is studied. It is particularly pronounced in the case of an inverted band structure at low electron concentrations.