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On the theory of electron localization in amorphous systems
Author(s) -
Schreiber J.,
John W.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220780119
Subject(s) - randomness , diagonal , delocalized electron , anderson impurity model , amorphous solid , condensed matter physics , analogy , physics , electron , function (biology) , statistical physics , electron localization function , quantum mechanics , mathematical physics , mathematics , chemistry , crystallography , geometry , linguistics , statistics , philosophy , evolutionary biology , biology
For a generalized tight binding model of amorphous one‐component systems, where the energy levels and the surrounding overlap and hopping integrals are linearly coupled, the localization theory of Economou and Cohen is applied. In terms of several approximations the localization function L ( E ) is discussed. Thereby it is confirmed that the off‐diagonal randomness has a delocalization effect. An Anderson transition can only take place if diagonal disorder is strong enough. As an example, the influence of diagonal spin disorder due to electron correlation, treated in the alloy analogy for the Hubbard model, is studied.