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Electric field induced changes of the fundamental absorption and low‐temperature energy relaxation in n‐type GaSb
Author(s) -
Obiditsch M.,
Kahlert H.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220770231
Subject(s) - phonon , electric field , condensed matter physics , scattering , materials science , attenuation coefficient , photon energy , absorption (acoustics) , relaxation (psychology) , phonon scattering , atomic physics , optics , photon , physics , psychology , social psychology , quantum mechanics
The dependence of the absorption coefficient α on the photon energy is investigated for different degenerately doped samples of n‐type GaSb in the region of the fundamental absorption. A comparison of the experimental data with the theory by Dyakonov et al. shows satisfactory agreement for α > 500 cm −1 . The application of pulsed electric fields at a lattice temperature of 6 K gradually removes the Burstein‐Moss shift. A comparison of the experimentally obtained absorption edges for various applied electric fields to calculated curves allows to correlate energy loss rates to certain values of the electron temperature T e . A calculation of this dependence considering acoustical and polar optical phonon scattering reveals that single phonon scattering processes are not capable of explaining the data between 12 and 40 K. Following the treatment by Ngai a calculation of the energy loss rate for two‐phonon deformation potential scattering is performed. The temperature dependence of this mechanism is in good agreement with the experimental values thus allowing to deduce a value of the two‐phonon deformation potential D 2TA ≈ 5 × 10 3 eV.