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Scattering of free carriers due to the strain field of screw dislocations in semiconductors
Author(s) -
Farvacque J. L.,
Gerlach E.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220770228
Subject(s) - semiconductor , materials science , condensed matter physics , piezoelectricity , scattering , deformation (meteorology) , free carrier , optics , physics , optoelectronics , composite material
Using a method, based on the equivalence of energy loss and Joule heat the scatterin due to screw dislocations in semiconductors is calculated. In particular the effect of the deformation potential and the piezoelectric effect are considered.