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The influence of phonons and impurities on the broadening of excitonic spectra in gallium arsenide
Author(s) -
Alperovich V. L.,
Zaletin V. M.,
Kravchenko A. F.,
Terekhov A. S.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220770207
Subject(s) - gallium arsenide , impurity , phonon , spectral line , exciton , gallium , condensed matter physics , range (aeronautics) , materials science , absorption (acoustics) , atomic physics , molecular physics , chemistry , physics , quantum mechanics , organic chemistry , metallurgy , composite material
The absorption spectra near the fundamental edge of gallium arsenide are measured in the temperature range of 4.2 to 500 K on samples with concentration of charged impurities from 10 14 to 10 19 cm −3 . The description of the experiment by phenomenologically broadened theoretical spectra enables to determine the broadening parameter as a function of temperature and impurity concentration. The comparison of the results obtained with microscopic theories shows the interactions of excitons with longitudinal optical phonons and charged impurities to be the main broadening mechanisms. A semiempirical equation is obtained which permits to calculate the broadening parameter in gallium arsenide for a given temperature and impurity concentration.