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Steady‐state diffusion of point defects in the interaction force field
Author(s) -
Yoo M. H.,
Butler W. H.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220770116
Subject(s) - crystallographic defect , vacancy defect , dislocation , infinitesimal , diffusion , sink (geography) , materials science , diffusion equation , condensed matter physics , radius , flux (metallurgy) , mechanics , thermodynamics , physics , mathematical analysis , mathematics , cartography , computer security , computer science , geography , economics , economy , service (business) , metallurgy
The diffusion equation including the drift term due to the long‐range interaction between a point defect and a spherical sink is solved numerically for the steady‐state concentration of point defects. The effective capture radius of a sink is calculated from the flux integral of point defects, and the biased flux of interstitials over vacancies to an infinitesimal dislocation loop is obtained from the effective capture radii. Effects of temperature, point defect parameters, and elastic properties of the medium on the kinetics of vacancy‐inter‐stitial recombination and of dislocation loop growth are discussed.