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The electronic structure of trapped hole centres in SnO 2
Author(s) -
Zwingel D.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220770115
Subject(s) - hyperfine structure , impurity , spectral line , ion , atomic physics , excitation , doping , lattice (music) , electronic structure , materials science , condensed matter physics , molecular physics , chemistry , physics , organic chemistry , quantum mechanics , astronomy , acoustics
In SnO 2 single crystals, doped with Al and Ga, the ESR spectra of “trapped holes” are observed after UV excitation. A discussion of the hyperfine and superhyperfine parameters of the spectra shows that, due to the different electron configurations of the impurity ions, the hole is localized at different oxygen anions next to the impurity. Prominent temperature effects of the spectra show that exchange processes between different anion sites have to be taken into account, as well as the coupling to phonon modes of the lattice in order to explain the high‐temperature ESR spectra.