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Biexciton Luminescence with Interserial Transition of the Formed Exciton
Author(s) -
Khadzhi P. I.,
Petrashku K. G.,
Moskalenko S. A.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220760207
Subject(s) - biexciton , exciton , spontaneous emission , radiative transfer , excited state , recombination , atomic physics , luminescence , wavelength , physics , photoluminescence , condensed matter physics , materials science , chemistry , optoelectronics , optics , laser , biochemistry , gene
The process of biexciton radiative recombination is studied theoretically with the interserial transition of the exciton in semiconductors with direct allowed interband transitions. Analytical expressions for the spectral and temperature dependences of the rates of different radiative recombination channels are obtained along with the formation of the exciton in the ground, as well as in the excited states of the discrete or continuous spectrum. Depending on the band structures of the exciton and biexciton the emission band for radiative recombination with the formation of exciton possesses the boundary (threshold) frequency and the long‐wavelength (short‐wavelength) tail. Numerical calculations given for CdS indicate the giant probability of the treated process.