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Dielectric Permittivity of Semiconductors with Narrow Forbidden Gap in the Long‐Wave Limit
Author(s) -
Sheka D. I.,
Korol A. N.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220760145
Subject(s) - permittivity , condensed matter physics , semiconductor , dielectric , band gap , vacuum permittivity , physics , relative permittivity , materials science , quantum mechanics
In the random phase approximation the dielectric permittivity is evaluated for a semiconductor with a band structure described by Kane's energy band scheme (spin‐orbit interaction is neglected and the effect of higher bands is included in a very simplified form). It is demonstrated that the fact that several hole bands have been taken into account, when the operator of the kinetic energy ceased to be the Dirac one plays the principal role in the calculation of the static dielectric permittivity σ(q → 0). The analytical dependence of σ(q → 0) on the parameters of the semiconductor, width of the forbidden band E g , effective mass, and the lattice constant, is obtained. The spatial dispersion of the dielectric permittivity for zero‐gap semiconductors is considered in the long‐wave limit.