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Piezoresistance of Uniaxially Deformed n‐Si
Author(s) -
Mitin V. V.,
Tolpygo E. I.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220760144
Subject(s) - electron , impurity , scattering , ionization , condensed matter physics , materials science , deformation (meteorology) , doping , phonon , intensity (physics) , compression (physics) , atomic physics , physics , optics , composite material , quantum mechanics , ion
Piezoresistance of nondegenerate n‐Si is calculated for the case when the directions of the current and compression axis coincide with the 〈100〉 axis. Low temperatures are considered (T<100 K), when electrons are scattered by acoustic phonons, ionized impurities, and electrons of its own and other valleys. The piezoresistance is shown to depend not only on the impurity concentration but also on the scattering intensity of the electrons of one valley by those of the other valleys. The latter may be determined by comparing the experimental and theoretical deformation resistance dependences under the conditions when the acoustic scattering is inessential due to low temperatures or high doping levels.