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Transport Phenomena and Eigenoscillations of Hot Electrons in Semiconductors with Periodic Structure
Author(s) -
Dykman I. M.,
Tomchuk P. M.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220760142
Subject(s) - condensed matter physics , semiconductor , wave vector , physics , electron , homogeneity (statistics) , scattering , electric field , sign (mathematics) , charge carrier , vibration , optics , quantum mechanics , mathematics , mathematical analysis , statistics
Semiconductors with periodic impurity distribution are studied in electric fields heating the carriers. Both, elastic and inelastic scattering of carriers by lattice vibrations are con‐sidered. The calculations are carried out in a general form without concrete definition of the energy loss mechanism and without introduction of energy relaxation time. An expression for the additional current due to the sample in homogeneity valid over a wide range of fields is obtained. The sign of this current is opposite to the sign of the current in a homogeneous sample. Its absolute value firstly grows with increasing field and then drops up to zero. It is shown that the semiconductor inhomogeneity noticeably influences the spectrum of the eigenoscillations. The dependence of the frequency of these oscillations ω = ω r + i γ on the field strength and the wave vector is determined. The dependence of ω on the wave vector is resonant in nature. The frequency of the longitudinal waves is found to depend not only on the value, but also on the direction of the wave vector.