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Electron Paramagnetic Resonance of Two Stoichiometry‐Induced Intrinsic Defect Centres in CuGaS 2
Author(s) -
Von Bardeleben H. J.,
Goltzené A.,
Schwab C.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220760139
Subject(s) - electron paramagnetic resonance , stoichiometry , sulfur , annealing (glass) , isotropy , vacancy defect , ion , copper , molecule , anisotropy , excitation , chemistry , crystallography , materials science , nuclear magnetic resonance , physics , optics , organic chemistry , quantum mechanics , composite material
Related to the sulphur annealing conditions, two different EPR signals are observed in CuGaSg 2 With liquid sulphur, an isotropic photosensitive line is observed at g = 2.024 ± 0.002. With gaseous sulphur, an anisotropic spectrum, independent of light excitation, is recorded with g ∥[001] = 2.114 ± 0.005 and g ⊥ [001] = 2.005 ± 0.005. The suggested models for the intrinsic centres correspond respectively to a hole trapped on a copper vacancy and to a S 2 −molecule ion. The formation of both centres, important for the electrical compensation processes in CuGaS, is justified by the molecular composition of sulphur as a function of its physical state.