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Heat Conductivity Measurement at V 3 Si in the Temperature Range 4.2 to 80 K
Author(s) -
Hegenbarth E.,
Schmidt B.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220760132
Subject(s) - thermal conductivity , atmospheric temperature range , materials science , conductivity , range (aeronautics) , thermal conductivity measurement , condensed matter physics , electron , phonon , scattering , analytical chemistry (journal) , thermodynamics , chemistry , optics , physics , composite material , nuclear physics , chromatography
Abstract The heat conductivity of a V 3 Si‐crystal is measured in the temperature range from 4.2 to 80 K by a stationary method. The analysis of the measuring results shows, that the thermal conductivity of V 3 Si above the transition temperature can be described by the scattering of electrons on defects and phonons. From the behaviour of the thermal conductivity below the transition temperature the energy gap of V 3 Si can be determined.