Premium
Stress Dependence of the ( E l , E l + Δ 1 ), Transition in Germanium
Author(s) -
Kühn W.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220760130
Subject(s) - germanium , condensed matter physics , valence band , stress (linguistics) , spin–orbit interaction , materials science , coupling (piping) , valence (chemistry) , physics , band gap , quantum mechanics , silicon , composite material , metallurgy , linguistics , philosophy
The influence of uniaxial stress on the optical δ E 1 , E 1 + Δ 1 ), transition of Ge is reinvestigated theoretically and experimentally. Existing theoretical approaches are extended by explicitly considering the stress dependence of spin‐orbit interaction. For comparison of the results obtained the stress dependence of the ( E 1 , E 1 , + Δ 1 ), structure is measured by means of electroreflection, where special care is given to the potential stability at the electrolytesemiconductor interface. It can be shown that the combined influence of stress‐induced valence band coupling and modification of the spin‐orbit splitting allows to explain the measured stress dependences.