Premium
Low‐Energy Gap Semiconductor Mobilities in Presence of Spatial Fluctuations of Carrier Density
Author(s) -
Barjon D.,
Raymond A.,
Robert J. L.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220760123
Subject(s) - semiconductor , mobilities , charge carrier density , impurity , crystal (programming language) , condensed matter physics , scattering , materials science , electron mobility , ionization , optics , physics , optoelectronics , doping , ion , social science , quantum mechanics , sociology , computer science , programming language
It is shown that the ionized impurity mobility is reduced by a factor close to [1 +(Δn/n 0 )] −l when spatial fluctuations of the carrier density are present in the crystal. This result is valid for degenerated and non degenerated semiconductors. It is also shown, that acoustical or optical scattering modes are not affected by these fluctuations.