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Phonon Dispersion in V 3 Si
Author(s) -
Achar B. N. N.,
Barsch G. R.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220760113
Subject(s) - pseudopotential , phonon , softening , inelastic neutron scattering , condensed matter physics , electron , dispersion (optics) , materials science , symmetry (geometry) , scattering , dielectric , inelastic scattering , coupling (piping) , molecular physics , atomic physics , physics , optics , nuclear physics , optoelectronics , geometry , mathematics , metallurgy , composite material
The phonon frequencies of V 3 Si along the principal symmetry directions are calculated for a two band model from the microscopic dielectric screening approach. The d‐electrons are approximated by a δ 2 band without interchain coupling. For the electron‐ion interaction a local Heine‐Abarenkov pseudopotential is used, with parameters very similar to those given before for V and Si. The results agree semiquantitatively with inelastic neutron scattering data and exhibit the observed softening of the TA mode in [110] and of the LA mode in [100]. In addition, LA mode softening along [110] and [111] is predicted. The Γ 12 optic mode shows a small decrease with decreasing temperature.