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Fading Memory in the Theory of Electronic Excitation Transfer
Author(s) -
Sokolov F. F.,
Hizhnyakov V. V.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220750230
Subject(s) - hamiltonian (control theory) , phonon , fading , excitation , condensed matter physics , operator (biology) , electron , physics , quantum mechanics , statistical physics , materials science , mathematics , chemistry , mathematical optimization , biochemistry , decoding methods , repressor , transcription factor , gene , statistics
Within the framework of a model with the Hamiltonian of the electron–phonon interaction linear in the phonon operators, a memory function (MF) has been found which represents a kernel of the integral operator in a generalized master equation describing the migration of the electronic excitations in the crystal. At finite temperatures the microscopic elements of MF obtained fade in time. This is due to the presence of phonon‐assisted transitions which are competing with the zero‐phonon one. Therefore, the coarse‐grained MF has two characteristic fading times.