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Band Structure of Ga 1− x In x As
Author(s) -
Schulze K.R.,
Neumann H.,
Unger K.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220750211
Subject(s) - pseudopotential , bowing , electronic band structure , simple (philosophy) , ion , condensed matter physics , crystal structure , crystal (programming language) , nonlinear system , materials science , computational physics , physics , crystallography , chemistry , quantum mechanics , computer science , psychology , philosophy , epistemology , programming language , communication
The band structure of Ga 1− x In x As is calculated in the virtual crystal approximation using the empirical pseudopotential method. A simple model is proposed and tested to consider the change of the screening due to alloying accounting for the nonlinear relationship between bare and effective ion potentials. The bowing parameters found in this manner are smaller than the experimental ones and disorder effects must be included to achieve agreement between theory and experiment.