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Luminescence of Highly Excited ZnTe Crystals
Author(s) -
Opanowicz A.,
Marinova K.,
Liebing H.,
Ruppel W.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220750209
Subject(s) - exciton , luminescence , atomic physics , excited state , excitation , biexciton , impurity , ionization , spontaneous emission , acceptor , photoluminescence , laser , materials science , chemistry , physics , optoelectronics , condensed matter physics , optics , ion , organic chemistry , quantum mechanics
Abstract The luminescent emission of undoped and P‐doped ZnTe single crystals is measured at 1.8 and 77 K under one‐photon excitation by a Cd‐He laser and a ruby laser. At 1.8 K, at low excitation intensities, radiative recombination through bound excitons and impurities predominates. At increasing intensity, inelastic exciton‐exciton collisions become the most important recombination process. At the highest excitation, ionisation of excitons occurs accompanied by band‐to‐band recombination. At 77 K, all bound excitons except those bound to donor–acceptor centres are destroyed. At low excitation intensities, radiation from the decay of free excitons, band‐to‐band transitions, and impurity centres are observed. At high intensities, radiation from inelastic exciton‐electron collisions is predominant.