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Volume Plasma Faraday Effect in n‐Type GaAs
Author(s) -
Rheinländer B.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220750128
Subject(s) - faraday effect , plasma , rotation (mathematics) , epitaxy , condensed matter physics , faraday cage , materials science , electron , infrared , atomic physics , physics , optics , magnetic field , nanotechnology , geometry , mathematics , layer (electronics) , quantum mechanics
The infrared Faraday rotation of transmitted light is measured on highly Sn‐doped, n‐type GaAs epitaxial layers in the spectral region of the plasma resonance at temperatures of 300 and 130 K. The experimental results are explained applying the Drude theory. The statistical effect of the energy distribution of the electrons in the band is taken into consideration. The damping influence on the rotation is discussed in detail. The availability of the plasma rotation method for the determination of volume properties of epitaxial layers is pointed out.