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The Influence of the Hyperfine Range Magnetic Field on Charge Transfer States at the Metal–Organic Semiconductor Interface
Author(s) -
Kaulach I. S.,
Silinsh E. A.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220750126
Subject(s) - hyperfine structure , photoconductivity , conductivity , magnetic field , exciton , semiconductor , atomic physics , condensed matter physics , materials science , charge carrier , chemistry , singlet state , optoelectronics , physics , excited state , quantum mechanics
Hyperfine range (HFR) magnetic field ( H < 300 Oe) induced increase of photoconductivity and decrease of dark conductivity are observed in thin‐layer sandwich type Au‐tetrathiotetracene‐Al systems. The experimental results are interpreted in terms of HFR magnetic field influence on single‐triplet transition rate of charge transfer (CT) states at metal (Me)‐organic semiconductor (OS) interface in the framework of Merrifield's et al. hyperfine interaction model. It is suggested that in the case of photoconductivity, triplet 3 CT states are initially formed by molecular triplet exciton dissociation at the Me‐OS interface, whereas in the case of dark conductivity, singlet 1 CT states are initially formed in the process of non‐equilibrium hole injection from the Me electrode. The HFR magnetic field reduces the 1 CT– 3 CT transition rate and is thus assumed to cause the observed increase of photo‐ and decrease of dark conductivity. The possible role of the inhomogeneous local magnetic field caused by the charge carriers trapped near the Me‐OS interface on the rate of 1 CT– 3 CT transition is also briefly discussed.