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The Use of Modified Relaxation Time in the Transport Theory of Non‐Crystalline Semiconductors
Author(s) -
Krempaský J.,
Barančok D.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220740236
Subject(s) - semiconductor , magnetoresistance , condensed matter physics , relaxation (psychology) , hall effect , point (geometry) , thermoelectric effect , electron , transport phenomena , statistical physics , electrical resistivity and conductivity , materials science , electron mobility , physics , quantum mechanics , mathematics , magnetic field , psychology , geometry , social psychology
It is shown that the theory of transport characteristics of non‐crystalline semiconductors can be successfully treated within the framework of appropriately modified expressions for relaxation time. The results of this method related to the electrical conductivity, the drift mobility, the thermoelectric effect, the Hall effect, and the magnetoresistance provide the possibility to explain many pecularities of these phenomena from a unified point of view and without any additional assumption. The success of this method lies in the fact that also the electrons in weakly localised states are taken into the calculation.