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Phonon‐Assisted Electroabsorption by Contact Excitons
Author(s) -
Pribram J. K.,
Penchina C. M.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220740140
Subject(s) - phonon , exciton , materials science , condensed matter physics , optoelectronics , optics , physics
The imaginary part of the dielectric constant for an indirect‐gap semiconductor in a uniform electric field is calculated in closed form using a one‐dimensional electron‐hole contact interaction model. Results are compared with previous calculations for direct transitions. Typical spectra are illustrated for direct and indirect transitions at various field strengths.