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ESR Analysis of IIB‐IV‐V 2 Semiconductors with Mn 2+ as a Paramagnetic Probe
Author(s) -
Kaufmann U.,
Räuber A.,
Schneider J.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220740117
Subject(s) - hyperfine structure , electron paramagnetic resonance , ternary operation , semiconductor , paramagnetism , impurity , crystallography , chemistry , ion , materials science , atomic physics , nuclear magnetic resonance , condensed matter physics , physics , optoelectronics , organic chemistry , computer science , programming language
The electron spin resonance spectra of Mn 2+ impurities in the chalcopyrite semiconductors ZnSiP 2 , CdSiP 2 , and ZnSiAs 2 , have been analysed. These impurities are used as a paramagnetic probe to demonstrate the magnetic non‐equivalence of the two group IIB sites in the unit cell of a IIB‐IV‐V 2 compound. The 55 Mn 2+ hyperfine constants A observed here are very close to those in the binary analogs GaAs and GaP indicating that bond ionicities in both classes of semiconductors are quite similar. The ESR line widths of Mn 2+ in the ternary compounds are considerably smaller than those in GaP and GaAs and anion ligand hyperfine structure is resolved. These results suggest that cation ligand hyperfine interaction and/or strains are an important ESR line broadening mechanism in III‐V semiconductors.