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Strain‐Associated Band Tailing Effect in Semiconductors
Author(s) -
Leyral P.,
Bois D.,
Pinard P.
Publication year - 1976
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220730116
Subject(s) - semiconductor , strain (injury) , condensed matter physics , materials science , enhanced data rates for gsm evolution , epitaxy , absorption edge , band gap , optics , optoelectronics , physics , composite material , telecommunications , layer (electronics) , computer science , medicine
In order to explain the band tails experimentally observed in undoped semiconductors especially in GaAs, a model for band tails associated with inhomogeneous strain fields has been developed. An analytical law for the optical absorption edge is deduced and compared with experimental results obtained in bulk or epitaxial GaAs samples. Two cases are considered: spherical and cylindrical strain fields. The origin of such strain fields, dislocations or precipitates, is discussed.