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On the measurement of the conductivity density of states of evaporated amorphous silicon films
Author(s) -
Brodsky M. H.,
Döhler G. H.,
Steinhardt P. J.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220720237
Subject(s) - amorphous solid , conductivity , materials science , fermi level , density of states , crystal (programming language) , amorphous silicon , condensed matter physics , schottky diode , schottky barrier , semiconductor , variable range hopping , rectangular potential barrier , electrical resistivity and conductivity , silicon , diode , optoelectronics , crystallography , chemistry , crystalline silicon , thermal conduction , physics , composite material , electron , quantum mechanics , computer science , programming language
Data are analyzed on the conductivity across the barrier between amorphous and crystal Si. The analysis assumes that variable range hopping near the Fermi level is the dominant conductivity mechanism in the evaporated amorphous Si film and band conductivity is dominant in the crystal. The density of states is found to be 1.2 × 10 20 eV −1 cm −3 at the Fermi level in amorphous Si. The barrier heights are found to be larger when the crystal is p‐type. This is in contrast to the somewhat analogous case of metal–semiconductor Schottky barrier diodes in which n‐type crystals give higher barriers. The possibility of applications in circuits is pointed out.