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Modulated spectroscopy of zincblende semiconductors. Calculation of piezomodulation parameters for indirect semiconductors
Author(s) -
Mathieu H.,
Auvergne D.,
Merle P.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220720218
Subject(s) - semiconductor , absorption edge , phonon , materials science , attenuation coefficient , condensed matter physics , spectroscopy , enhanced data rates for gsm evolution , absorption (acoustics) , modulation (music) , chemistry , optoelectronics , optics , physics , quantum mechanics , band gap , acoustics , telecommunications , computer science , composite material
Relative modulation parameters are calculated for the absorption coefficient in the indirect absorption edge region for periodically stressed zincblende‐type semiconductors. The calculations are made for [001] and [111] uniaxial and coplanar stresses, for all possible phonons, for all independent polarizations of light, and through all relevant intermediate states (Γ 1c , Γ 15c and X 5v or L 3v ).