Modulated spectroscopy of zincblende semiconductors. Calculation of piezomodulation parameters for indirect semiconductors | Zendy

Mathieu H. | Zendy; Auvergne D. | Zendy; Merle P. | Zendy

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Modulated spectroscopy of zincblende semiconductors. Calculation of piezomodulation parameters for indirect semiconductors

Author(s) -

Mathieu H.,

Auvergne D.,

Merle P.

Publication year - 1975

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2220720218

Subject(s) - semiconductor , absorption edge , phonon , materials science , attenuation coefficient , condensed matter physics , spectroscopy , enhanced data rates for gsm evolution , absorption (acoustics) , modulation (music) , chemistry , optoelectronics , optics , physics , quantum mechanics , band gap , acoustics , telecommunications , computer science , composite material

Relative modulation parameters are calculated for the absorption coefficient in the indirect absorption edge region for periodically stressed zincblende‐type semiconductors. The calculations are made for [001] and [111] uniaxial and coplanar stresses, for all possible phonons, for all independent polarizations of light, and through all relevant intermediate states (Γ 1c , Γ 15c and X 5v or L 3v ).

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