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On the influence of a smooth gaussian random field on optical thresholds in disordered semiconductors and external electric field induced change
Author(s) -
Esser B.,
Kleinert P.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220720210
Subject(s) - random field , electric field , gaussian , gaussian random field , isotropy , field (mathematics) , physics , condensed matter physics , transversal (combinatorics) , dielectric , mathematics , gaussian function , mathematical analysis , quantum mechanics , pure mathematics , statistics
The interband dielectric function ϵ(ω) and its external field induced change Δϵ(ω, E ) are calculated in the one‐electron approximation for optical transitions between initial and final states shifted randomly in space by a smooth Gaussian random field. All types of critical points are considered. Using an exact semi‐classical approach up to the order of h 2 the influence of the smooth Gaussian random field in ϵ(ω) and Δϵ(ω, E ) is shown to be representable as an averaging of the corresponding Franz‐Keldysh expressions. The M 3 and M 2 problems are shown to be reducible to the M 0 and M 1 ones. The plots for ϵ(ω) and Δϵ(ω. E ) are presented for the isotropic M 0 point and the M 1 point with equal transversal masses.