Premium
On the scattering of conduction electrons by magnetic impurities in semiconductors of InSb‐Type and HgTe‐Type band structure
Author(s) -
Kossut J.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220720139
Subject(s) - condensed matter physics , scattering , electron , impurity , thermal conduction , semiconductor , physics , conduction band , ionized impurity scattering , optics , quantum mechanics
The relaxation time and the mobility are calculated for the case of the conduction electrons scattered by impurities possessing localized magnetic moments. The Kane model is used to describe the energy bands. The perturbing potential is assumed to be of a short range. The numerical estimations are made for two special forms of perturbation: delta‐like and square‐well form. The estimations show that the contribution of the considered mechanism to the mobility is small compared to that of other scattering mechanisms. However, there exist transport phenomena which seem to be strongly influenced by magnetic impurity scattering.