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Near‐edge spontaneous photoluminescence in GaSe 1– x S x
Author(s) -
Kuroda N.,
Nishina Y.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220720108
Subject(s) - photoluminescence , exciton , spectral line , luminescence , conduction band , enhanced data rates for gsm evolution , atomic physics , condensed matter physics , physics , materials science , molecular physics , optics , quantum mechanics , electron , computer science , telecommunications
Photoluminescence spectra of GaSe 1– x S x (0 ≦ x ≦ 0.2) are investigated at 4.2 K by the time resolving method. The shift in the photon energies of the luminescence lines with respect to the chemical composition x may be understood without any quantitative contradiction if one employs the empirical model that the direct conduction band edge lies 5 meV below the indirect one, whereas the ground state of the direct exciton lies 13 meV above that of the indirect one in ϵ, γ‐GaSe at 4.2 K. The direct–indirect gap reversal occurs near x = 1 × 10 −2 .