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Relaxation Time of Phonons Interacting with Charge Carriers in GaAs
Author(s) -
Kravchenko A. F.,
Magarill L. I.,
Romanov A. A.,
Semchukov N. F.,
Skok E. M.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220710234
Subject(s) - phonon , condensed matter physics , electron , relaxation (psychology) , charge carrier , semiconductor , phonon drag , physics , materials science , quantum mechanics , thermoelectric effect , psychology , social psychology , seebeck coefficient
A theory of transmitted phonon drag effect (TPDE) in a sandwich n‐i‐n‐structure (n is an electron layer and i a semiinsulating one of the semiconductor) is considered. The solution is performed on the basis of a kinetic equation system for electrons and phonons. The calculated results enable a good qualitative description of the main dependences of TPDE in GaAs. An analysis of experimental results shows that the transmitted phonons are dragged by electrons mainly through the deformation potential. The transmitted phonons are represented by long‐wavelength acoustic ones the relaxation of which is described by Herring's theory, the constant of the phonon‐phonon interaction B is equal to 2 × × 10 −17 cm deg −3 .