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Experimental Evidence of an Electronic Localization in n‐Type InSb Using a Microwave Technique
Author(s) -
Ferre D.,
Dubois H.,
Biskupski G.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220710224
Subject(s) - indium antimonide , delocalized electron , microwave , electron , physics , beat (acoustics) , bolometer , condensed matter physics , optics , detector , quantum mechanics
It is well known that, when irradiated by two microwaves of frequencies v 1 and v 2 , a sample of n‐type indium antimonide generates a beat at the intermediate frequency (i.f.) v [ v 1 _ v 2 ]; that superheterodyne‐detecting property originates from the non‐linearity ofthe I‐U characteristic in weak electric field. It is shown here that, if the classical results about InSb bolometer mixer are valid whenelectrons are free, a new feature appears when localized and delocalized electronic states are both present in the crystal; in this case, the signal detected at i.f. frequency must be separated into two parts: the beat generated by free electrons at frequency v on the one hand and the “response” of localized electrons subjected to this beat on the other hand. It is also shown that information obtained about electronic localization is in good agreement with that one previously deduced from resistivity measurements. In conclusion, such a method appears to be a very convenient way of sonding electronic distribution in a given material.