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Electroreflectance Spectra of Heavily Doped Semiconductors. Field Inhomogeneity in the Low‐Field Limit
Author(s) -
Humlíček J.,
Lukeš F.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220710131
Subject(s) - spectral line , doping , field (mathematics) , limit (mathematics) , semiconductor , condensed matter physics , electric field , materials science , range (aeronautics) , physics , analytical chemistry (journal) , chemistry , quantum mechanics , mathematics , optoelectronics , mathematical analysis , chromatography , pure mathematics , composite material
The influence of the electric field inhomogeneity on the electrorefleetance (ER) spectra has been included into the theory in the low‐field limit by means of the corrected Seraphin coefficients. One typical example of the ER spectra of heavily doped Ge (n‐type samples with donor concentration N D = 9 × 10 17 cm −8 ) in the range of E 1 and E 1 + Δ 1 transitions proves that the lineshape of the ER spectra may well be expressed by the microscopic model verified earlier for pure Ge with additional inclusion of the field inhomogeneity.