Premium
Linear Magnetoresistance in Parabolic Semiconductors
Author(s) -
Arora V. K.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220710129
Subject(s) - boltzmann equation , magnetic field , degenerate energy levels , magnetoresistance , condensed matter physics , physics , density matrix , tensor (intrinsic definition) , limit (mathematics) , diagonal , boltzmann constant , isotropy , mathematical analysis , mathematics , quantum mechanics , geometry , quantum
A density matrix approach is described to calculate the complete ohmic magnetoresist‐ivity tensor for a non‐degenerate and non‐polar semiconductor with isotropic effective mass. The conventional methods using the Boltzmann transport equation cannot be used in a satisfactory way with magnetic fields of arbitrary strength. The presence of a magnetic field in a crystal introduces some non‐diagonal elements of the velocity operator, which could be averaged properly by using the density matrix. The results obtained agree with those obtained from the Boltzmann transport equation in the limit of low magnetic field including the value of zero.