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Interband Faraday Rotation and Ellipticity in Silicon Measured by Polarization Modulation
Author(s) -
Metzdorf J.,
Kessler F. R.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220710124
Subject(s) - faraday effect , faraday rotator , condensed matter physics , polarization (electrochemistry) , faraday cage , magnetic field , wafer , physics , optics , rotation (mathematics) , modulation (music) , materials science , chemistry , optoelectronics , quantum mechanics , geometry , mathematics , acoustics
Interband Faraday rotation has been measured in Si up to the first reversal in sign at 3.33 eV photon energy corresponding to the beginning of direct transitions at the zone centre. The direct gap is found to be (3.33 ± 0.02) eV at 300 K. The samples, very thin, self‐supporting films ( d ≧ 0.1 μm), were obtained from epitaxial Si wafers. Faraday ellipticity as well as rotation has been measured to an accuracy of ≦ 10 −5 using polarization modulation, which corresponds to a hundred percent magnetic field modulation. Faraday ellipticity, measured below 2.3 eV, is only associated with indirect transitions. But the Faraday rotation due to these indirect transitions calculated from ellipticity according to the Kramers‐Kronig relationship is at the maximum 2% of the total rotation. The influence of the direct and indirect transitions is discussed.